excelics EMA302B preliminary data sheet 22-26 ghz medium power mmic 22-26 ghz bandwidth +28.0 dbm typical output power 15 db 1.5 db typical power gain two stage, input partially matched, output match off chip 0.3 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial heterojunction profile provides extra high power efficiency, and high reliability electrical characteristics 1 (t a = 25 o c) symbol parameters/test conditions min typ max unit f operating frequency range 22 26 ghz p 1db ouput power at 1db gain compression 28 dbm gss small signal gain 15 db pae power added efficiency at 1db gain compression 24 % vswr in input vswr 2.5:1 vswr out output vswr 3.0:1 ids1/ids2 drain supply currents for 1 st & 2 nd stages 120/240 ma vdd power supply voltage 6 8 v rth thermal resistance (au-sn eutectic attach) 18 o c/w note: 1. specifications are based on device mounted in application circuit. d.c. characteristics for 1 st & 2 nd fets follow those of epa080a and epa160a, respectively. maximum ratings at 25 o c symbols parameters absolute 2 continuous 3 vds drain-source voltage 12v 8v vgs gate-source voltage -8v -3v ids1/ids2 drain current idss 260 ma / 520 ma igsf1/igsf2 forward gate current 40 ma / 80 ma 7ma / 14 ma pin input power 25dbm @3db compression tch channel temperature 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c pt total power dissipation 7.5 w 6.3 w note: 2. exceeding any of the above ratings may result in permanent damage. 3. exceeding any of the above ratings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970-8664 fax: (408) 970-8998 web site: www.excelics.com chip thickness: 75 13 microns all dimensions in microns 65 50 85 50 50 1020 185 285 165 260 425 900 95 255 305 325 165
EMA302B p reliminary data sheet 22-26 ghz mediu m po w er mmic s- p arameters (chip without external m atching circuit) 8v, 1/2 ids s fr e q --- s 1 1 -- - --- s 2 1 -- - --- s 1 2 -- - --- s 2 2 --- (ghz ) m a g a ng m a g a ng m a g a n g m a g a ng 1 0.95 5 -72. 5 0.39 6 -138. 9 0.000 177.5 0.01 9 -164.0 2 0.95 9 -110.2 6.67 0 107.4 0.00 1 73. 5 0.15 5 -66.5 3 1.04 6 -126. 7 10.32 4 -37. 5 0.001 172.1 0.30 7 -100.9 4 1.06 1 -145. 3 6.66 9 -15. 9 0.004 165.1 0.34 6 -102.5 5 1.07 5 -156. 4 15.10 0 -72. 7 0.009 143.1 0.68 6 -101.5 6 0.91 6 -164. 1 11.58 5 -154. 3 0.010 100.1 0.75 4 -147.9 7 0.91 3 -163.5 5.88 3 172.1 0.00 7 95. 3 0.53 6 -152.7 8 0.92 5 -164. 5 3.72 6 154. 9 0.007 103.4 0.48 4 -147.5 9 0.92 6 -165. 4 2.66 0 142. 4 0.009 108.3 0.48 4 -143.2 10 0.93 3 -165. 4 2.10 9 133. 0 0.005 100.8 0.51 7 -139.2 11 0.93 9 -165. 7 1.74 7 123. 3 0.006 115.3 0.54 3 -138.2 12 0.93 8 -164. 6 1.52 0 114. 7 0.007 117.3 0.57 1 -139.3 13 0.93 6 -164. 4 1.37 2 106. 1 0.008 131.5 0.59 8 -140.6 14 0.93 5 -165. 7 1.27 8 97. 5 0.008 121.1 0.63 1 -141.3 15 0.93 4 -167. 8 1.22 9 88. 1 0.008 120.0 0.64 9 -142.0 16 0.93 3 -168. 4 1.24 9 79. 2 0.008 104.3 0.67 9 -143.5 17 0.92 4 -169. 2 1.27 2 68. 3 0.007 111.8 0.69 5 -147.6 1 8 0.91 0 -172.3 1.35 8 56.3 0.01 0 84. 6 0.74 3 -150.3 19 0.895 179. 7 1.48 6 43. 5 0.00 6 91.2 0.76 7 -147.5 20 0.868 171. 0 1.68 8 28. 1 0.00 6 87.5 0.79 7 -145.3 21 0.809 171. 2 2.02 7 10. 4 0.00 6 89.1 0.83 5 -154.2 22 0.713 164. 0 2.60 6 -13. 9 0.00 4 73.0 0.88 1 -156.3 22.5 0.613 162. 1 3.03 2 -30. 7 0.00 4 63.4 0.89 5 -159.4 23 0.473 164. 8 3.45 9 -51. 3 0.00 2 66.1 0.92 3 -162.8 23.5 0.34 7 -176. 7 3.72 8 -76. 5 0.003 121.7 0.92 6 -166.6 24 0.40 0 -147. 1 3.61 8 -103. 8 0.007 133.1 0.92 2 -169.1 24.5 0.55 8 -139. 4 3.17 5 -129. 8 0.009 122.1 0.89 7 -170.7 25 0.68 4 -141. 3 2.64 7 -152. 3 0.012 114.1 0.87 4 -169.7 25. 5 0.76 4 -145.0 2.13 5 -171.9 0.01 2 99. 9 0.86 1 -169.7 2 6 0.81 0 -147.9 1.70 8 170.0 0.01 4 90. 0 0.87 9 -169.4 2 7 0.89 1 -153.0 1.14 2 141.0 0.01 4 85. 5 0.87 0 -165.1 2 8 0.92 9 -156.3 0.75 0 113.7 0.01 6 84. 5 0.85 1 -163.6 2 9 0.95 6 -156.5 0.50 2 91.7 0.01 9 81. 6 0.83 9 -162.0 3 0 0.96 8 -155.1 0.33 8 78.3 0.02 6 64. 0 0.85 2 -163.2 3 1 0.97 5 -152.8 0.22 8 52.3 0.01 8 49. 3 0.84 6 -160.7 3 2 0.98 1 -153.0 0.15 7 31.8 0.01 3 54. 7 0.85 6 -158.2 3 3 0.98 3 -154.1 0.11 8 14.7 0.01 2 57. 3 0.90 2 -157.0 3 4 0.98 8 -153.9 0.11 3 -20.8 0.01 7 48. 1 0.77 2 -160.7 3 5 0.98 3 -154.0 0.03 5 -18.1 0.01 1 78. 3 0.87 9 -157.1 3 6 0.98 8 -155.5 0.02 5 -38.4 0.00 7 85. 2 0.88 1 -157.3 37 0.99 7 -158. 4 0.01 2 -53. 2 0.007 107.8 0.86 7 -158.0 38 1.00 7 -157. 6 0.00 6 112. 6 0.009 109.7 0.86 2 -163.6 3 9 1.00 4 -153.8 0.00 2 165.9 0.00 8 89. 1 0.85 1 -172.9 4 0 0.98 1 -154.9 0.01 5 -101.3 0.00 8 56. 0 0.87 1 -177.9 note : t he data included 0.7 m ils dia m eter au bonding w ires: 2 input w ires, 10 m ils each; 4 output w ires, 12 m ils each.
EMA302B preliminary data sheet 22-26 ghz medium power mmic typical application circuit typical application performance characteristics output power at 1db compression (dbm) 25 26 27 28 29 30 21 22 23 24 25 26 27 frequency, ghz vdd=6v, idd=490ma small si g nal gain (db) 5 7 9 11 13 15 17 20 22 24 26 28 30 frequency, ghz vdd=6v, idd=490ma
EMA302B preliminary data sheet 22-26 ghz medium power mmic application hints the device should be die attached with gold-tin eutectic. epoxy die attach is not recommended. thermocompression bonding of .7 mil to 1 mil diameter gold wire is recommended. the EMA302B is partially input matched. some input match and the output match must be provided off-chip. this allows the use of optimal materials for matching networks to minimize loss, and provides for flexibility to optimize the match for the application frequency. typically the bond wire inductance will form part of the matching network, so bond wire lengths must be controlled and repeatable. the sources of the transistors are directly via-hole grounded. a negative voltage is required to bias the gates of the transistors. the gate voltage for the input stage must be provided at the rf input bonding pad, and the drain current for the output stage must be provided through the output bonding pad. appropriate bias networks must be provided off chip. typically a quarter wave microstrip line or bond wire will suffice. adequate dc blocking and bypassing must also be provided. a series resistance of about 50 ohms is recommended in the gate dc bias circuit of each fet to limit gate current and suppress low frequency oscillations. the drain bias circuits should be well bypassed down to mhz frequencies to prevent oscillations. some isolation should be provided between the two drain circuits at ghz frequencies to prevent oscillations. although there is some bypassing on chip of the vd1 and vg2 terminals, additional bypass capacitors, placed close to the chip, are recommended. the gate and drain power supplies should be sequenced to turn on the negative gate voltage before the positive drain voltage is applied. turning on the full drain voltage before the gate voltage can cause excessive power dissipation or destructive oscillations.
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